TCAD News, September 2007
نویسنده
چکیده
The first article presents a complete TCAD flow for typical high-performance 45-nm CMOS technologies, such as the ones being readied for production at major foundries and integrated device manufacturers around the world. This work incorporates approaches to simulate innovative process steps such as laser annealing and high-k gate dielectrics, a necessity in the continual challenge to contain short-channel effects, and makes full use of the capabilities in Sentaurus for treating stress-induced mobility enhancement. The availability of the flow as a Sentaurus Workbench project makes it an ideal starting point for process and device engineers taking the first steps in using Sentaurus for advanced CMOS simulation, as well as a reference work for veteran TCAD engineers.
منابع مشابه
TCAD News, June 2007
Welcome to the latest issue of TCAD News. Over the years, TCAD has proven to be an enabling methodology for reducing technology development costs and time. The use of TCAD, however, extends beyond nanoscale silicon CMOS devices. In this issue, I am delighted to present articles showing the wide application of TCAD tools for modeling and analyzing physical phenomena and effects beyond nanoscale ...
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